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Industrial Day

Industrial Day

Updated: January 22, 2024

Morning and Afternoon of Monday (May 6)
Pre-registration required.

These special sessions will focus on several current topics involving Magnetism in Industry.
See details below.

A technology perspective on MRAM: status, challenges, and future directions

Join us for a special event on Magneto-resistive Random-Access Memory (MRAM) to delve into the status, challenges, and future directions of MRAM through insights shared by industry experts. This full-day event will cover both STT-MRAM (Spin-Transfer Torque MRAM) and SOT-MRAM (Spin-Orbit Torque MRAM) with a tutorial and the latest technological advancements in each domain. Designed to be educational and accessible, this event caters to a general audience, offering a valuable experience for both those with and without prior MRAM knowledge. Don't miss this opportunity to broaden your understanding of MRAM technology and stay informed about its exciting developments!

Time: 9:00 AM - 11:45 AM & 1:30 PM - 4:00 PM on Monday (May 6th, 2024)

Event Co-organizers
Guohan Hu

Guohan Hu
IBM T J Watson Research Center, USA

Jeong-Heon Park

Jeong-Heon Park
Semiconductor R&D Center, Samsung Electronics, South Korea

Invited Speakers on STT-MRAM
Daniel Worledge

Daniel Worledge
IBM Almaden Research Center, USA

Sanjeev Aggarwal

Sanjeev Aggarwal
Everspin Technologies, Inc., USA

Aleksandra Titova

Aleksandra Titova
GlobalFoundries, Germany

Hyunsung Jung

Hyunsung Jung
Semiconductor R&D Center, Samsung Electronics, South Korea

Invited Speakers on SOT-MRAM
Luqiao Liu

Luqiao Liu
Massachusetts Institute of Technology, USA

Kevin Garello

Kevin Garello
Spintec, France

Siddharth Rao

Siddharth Rao
Compute and Memory Technologies, IMEC, Belgium

Hiroaki Yoda

Hiroaki Yoda
YODA-S, Inc., Japan