Morning and Afternoon of Monday (May 6) Pre-registration required.
These special sessions will focus on several current topics involving Magnetism in Industry. See details below.
Join us for a special event on Magneto-resistive Random-Access Memory (MRAM) to delve into the status, challenges, and future directions of MRAM through insights shared by industry experts. This full-day event will cover both STT-MRAM (Spin-Transfer Torque MRAM) and SOT-MRAM (Spin-Orbit Torque MRAM) with a tutorial and the latest technological advancements in each domain. Designed to be educational and accessible, this event caters to a general audience, offering a valuable experience for both those with and without prior MRAM knowledge. Don't miss this opportunity to broaden your understanding of MRAM technology and stay informed about its exciting developments!
Time: 9:00 AM - 11:45 AM & 1:30 PM - 4:00 PM on Monday (May 6th, 2024)
Guohan Hu IBM T J Watson Research Center, USA
Jeong-Heon Park Semiconductor R&D Center, Samsung Electronics, South Korea
Daniel Worledge IBM Almaden Research Center, USA
Sanjeev Aggarwal Everspin Technologies, Inc., USA
Aleksandra Titova GlobalFoundries, Germany
Hyunsung Jung Semiconductor R&D Center, Samsung Electronics, South Korea
Luqiao Liu Massachusetts Institute of Technology, USA
Kevin Garello Spintec, France
Siddharth Rao Compute and Memory Technologies, IMEC, Belgium
Hiroaki Yoda YODA-S, Inc., Japan